落尽梨花元器件交易网
Standard Products
Data Sheet
December 2002
UT28F256 Radiation-Hardened 32K x 8 PROM
FEATURES
qProgrammable, read-only, asynchronous, radiation-hardened, 32K x 8 memory
-Supported by industry standard programmerq45ns and 40ns maximum address access time (-55 oC to +125 oC)
qTTL compatible input and TTL/CMOS compatible output levelsqThree-state data bus
qLow operating and standby current
-Operating: 125mA maximum @25MHz Derating: 3mA/MHz
-Standby: 2mA maximum (post-rad)qRadiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019-Total dose: 1E6 rad(Si)
- LETTH(0.25) ~ 100 MeV-cm2/mg
-Memory cell LET threshold: >128 MeV-cm2/mg
qQML Q & V compliant part-AC and DC testing at factory
qPackaging options:
-28-lead 50-mil center flatpack (0.490 x 0.74)
-28-lead 100-mil center DIP (0.600 x 1.4) - contact factoryqVDD: 5.0 volts 10%
q Standard Microcircuit Drawing 5962-96891
PRODUCT DESCRIPTION
The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened,
32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.
- 2/mg
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion
A(14:0)DECODER
MEMORYARRAY
SENSE AMPLIFIER
CEPEOE
PROGRAMMING
CONTROLLOGIC
DQ(7:0)
Figure 1. PROM Block Diagram
