A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

Feng Qian;Xing Tao;Wang Qiang;Feng Qing;Li Qian;Bi Zhi-Wei;Zhang Jin-Cheng;Hao Yue

【期刊名称】《中国物理：英文版》 【年(卷),期】2012(021)001

【摘要】Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layerdeposited Al2O3 gate dielectrics are fabricated.The device,with atomic-layer-deposited Al2O3 as the gate dielectric,presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm,which are better than those

reported

previously

with

Al2O3

as

the

gate

dielectric.Furthermore,the device shows negligible current collapse in a wide range of bias voltages,owing to the effective passivation of the GaN surface by the Al2O3 film.The gate drain breakdown voltage is found to be about 59.5 V,and in addition the channel mobility of the n-GaN layer is about 380 cm2/Vs,which is consistent with the Hall result,and it is not degraded by atomic-layer-deposition Al2Oa growth and device fabrication. 【总页数】5页(453-457) 【关键词】

【作者】Feng Qian;Xing Tao;Wang Qiang;Feng Qing;Li Qian;Bi Zhi-

Wei;Zhang Jin-Cheng;Hao Yue

【作者单位】School of Microelectronics, Xidian University, Xi'an 710071, China ;Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices,

Xidian

University,

Xi'an

710071,

China;School

of

Microelectronics, Xidian University, Xi'an 710071, China ;Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China ;Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China ;Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices,

Xidian

University,

Xi'an

710071,

China;School

of

Microelectronics, Xidian University, Xi'an 710071, China ;Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China ;Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China ;Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices,

Xidian

University,

Xi'an

710071,

China;School

of

Microelectronics, Xidian University, Xi'an 710071, China ;Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian

University, Xi'an 710071, China 【正文语种】中文 【中图分类】 【文献来源】

https://www.zhangqiaokeyan.com/academic-journal-cn_chinese-physics-b_thesis/0201251234513.html 【相关文献】

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