loadingTP808
■FEATURE:
FastResponseTime.HighAnalytic.
Cut-OffVisibleWavelength?p=940nmHighsensitivity.
LeadFreeproduct,incompliancewithRoHS.
■DESCRIPTIONS:
TP808consistofaninfraredemittingdiodeandaphototransistor,encasedside-by-sideonconvergingopticalaxisinablackthermoplastichousingthephototransistorreceivesradiationfromtheIRLEDonly.Thisisthenormalsituation.Butwhenanobjectisinbetween,thephototransistorcouldnotreceivetheradiation.
■APPLICATIONS:
Mousecopier.Switchscanner.Floppydiskdriver.Noncontactswitching.
1TP808
■DIMENSIONS
NOTE：1.Alldimensionsareinmillimeter.2.Toleranceis±0.2unlessotherwisenoted.2TP808
■ABSOLUTEMAXIMUMRATINGSATTa=25℃
ParameterPowerDissipationInputReverseVoltageForwardCurrentPeakForwardCurrentCollectorPowerDissipationOutputCollectorCurrentCollector-EmitterBreakdownVoltageEmitter-CollectorBreakdownVoltageOperatingTemperatureStorageTemperatureSolderingTemperatureSymbolPDVRIFIFPPCICBVCEOBVECOToprTstgTsolRatings7555017520305-25～+85-40～+85270℃for6secMax(2mmfromBody)UnitmWVmAAmWmAVV℃℃NOTES:IFPCONDITIONS--PULSEWIDTH≦100SANDDUTY≦1%.
■TYPICALELECTRICAL&OPTICALCHARACTERISTICS（Ta=25℃）
ParameterForwardVoltageInputReverseCurrentPeakWavelengthViewAngleCollectorDarkCurrentCollector-EmitterSaturationVoltageOnStateCollectorCurrentRiseTimeFallTimeSymbolVFIR?P2?1/2ICEOVCE(sat)940601000.4Min.TypeMax.Unit1.251.510V?AnmDegnAVVCE=10VIc=2mAIB=100μAVCE=5VIF=20mAVCE=5VIc=1mARL=1000Ω3TestConditionIF=50mAVF=5VOutputIC(on)TrTf0.5--10mATrnsferCharacteristics1515μSμSTP808
■RELIABILITYTESTITEMSANDCONDITIONS：
NO12ItemSolderHeatTemperatureCycleTestConditionsTEMP：270℃±3℃H:+85℃180min10minL:-25℃180min3ThermalShockH:+85℃30min30secL:-25℃30min4HighTemperatureStorage56LowTemperatureStorageHighTemperatureHighHumidityStorage85℃/93%RH1000HRS22pcs0DEFECTTestHours/Cycle10SEC16cyclesSampleQuantity11pcs22pcsTestResult0DEFECT0DEFECT10cycles11pcs0DEFECTTEMP：+25℃1000HRS22pcs0DEFECTTEMP：-25℃1000HRS22pcs0DEFECT4TP808
■TYPICALELECTRO-OPTICALCHARACTERISTICSCURVESFORIR:
1.0IF=0mA0.5RelativeRadiantIntensity(IF=20mA)RelativeRadiantIntensity00-40-20020406080100AmbientTemperatureTa(°C)Fig.2RelativeRadiantIntensityVsAmbientTemperature840940Wavelength(nm)Fig.1SpectralDistribution104010080Forwardcurrent(mA)604020000.61.21.82.4ForwardVoltage(V)3.0RadiantIntensity(mW/Sr)500300100503010533103050100300ForwardCurrent(mA)Fig.4ForwardCurrentVsRadiantIntensity5500Fig.3ForwardCurrentVsForwardVoltage010°20°30°40°1.00.90.80.70.50.30.10.20.40.6RadiantIntensityFig.5AngleVsRadiantIntensity550°60°70°80°90°