loading
DMP3028LSD
30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
AO4805替代型号DMP3028LSD V(BR)DS S Features
RDS(ON) Max 25m? @VGS = -10V 38m? @VGS = -4.5V Package SO-8 -30V ID TA = +25°C -6.0 A -4.7A ? ? ? ? Low Input Capacitance Low On-Resistance Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on- state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
? ? Mechanical Data
? ? ? ? ? ?
Case: SO-8
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (approximate)
Applications
? ? ?
DC-DC Converters
Power Management Functions Load Switch
S1 G1 S2 G2
Top View
Top View Pin Configuration
D1 D1 D2 D2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMP3028LSD-13 Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‘s definitions of Halogen- and Antimony-free, \and Lead-free.
3. Halogen- and Antimony-free \ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
DMP3028LSD
Document number: DS35966 Rev. 3 - 2
1 of 6
www.taochip.cn
June 2013
? Diodes Incorporated
DMP3028LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Symbol VDSS VGSS Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID ID IS IDM Continuous Drain Current (Note 5) VGS = 10V Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Value -30 ±20 -6 -4.7 -7.4 -5.8 -2.5 -30 Units V V A A A A
Thermal Characteristics
Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Characteristic TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Symbol PD RΘJA PD RΘJA RΘJC TJ, TSTG Value 1.3 0.8 102 61 1.7 1.1 75 50 14.5 -55 to +150 Units W °C/W W °C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) |Yfs| VSD Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf Min -30 — — -1 — — — — — — — — — — — — — — — — Typ — — — — 20 29 11 0.7 1241 147 110 15 22 10.9 3.5 4.7 9.7 17.1 60.5 40.4 Max — -1 ±100 -3 25 38 — 1.2 — — — — — — — — — — — — Unit V μA nA V m??S V Test Condition VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS =±20V, VDS = 0V VDS = VGS, ID = -250μA VGS = -10V, ID = -7A VGS = -4.5V, ID = -5.5A VDS = -5V, ID = -7A VGS = 0V, IS = -2.1A VDS = -15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz pF ?? nC VDS = -15V, ID = -7A nS VGS = -10V, VDD = -15V, RGEN = 6?, ID = -7A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.
DMP3028LSD
Document number: DS35966 Rev. 3 - 2
2 of 6
www.taochip.cn
June 2013
? Diodes Incorporated
DMP3028LSD
20
-ID, DRAIN CURRENT (A) 15 V GS = -10V 20 5.0V VDS = - VGS = -5. 0V VGS = -4.5V VGS = -4.0V
-ID, DRAIN CURRENT (A) 15 10 VGS = -3.5V VGS = - 3.0V 10
5 5 0?C TA = 1 5 TA = 125?C TA = 85?C TA = 25?C 0 0 V GS = -2.5V
5 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics
0 0 TA = -55?C 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics
ID = -7.0A 1 5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?) 0.05
0.30 0.25 0.04 ID = -6.2A
0.03 0.20 0.15 VGS = -4.5V 0.02 VGS = -10V 0.10
0.01 0.05 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage
30 0 0 5 10 15 20
-VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (?)
0.05 0.04 VGS = -4. 5V C TA = 150??1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 1.4 VGS = -5.0V 5.0A ID = - TA = 125??C VG S = -10V ID = -10A TA = 85??C 0.03 TA = 25??C
1.2 0.02 TA = -55 ?C 1.0
0.01 0.8 0.6 -50
0 0 2 4 6 8 10 12 14 16 18 20 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature
3 of 6
www.taochip.cn
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (?C)
Figure 6 On-Resistance Variation with Temperature
DMP3028LSD
June 2013
? Diodes Incorporated
Document number: DS35966 Rev. 3 - 2
DMP3028LSD
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE (?) 0.05 3.0 2.5 0.04 V V GS = -5.0 ID = -5.0A
2.0 -ID = 1mA 0.03
VGS = -1 0V I D = -10A 1.5 - ID = 250 μA 0.02 1.0
0.01 0.5 0 -50 -25
0 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (?C)
Figure 7 On-Resistance Variation with Temperature 20 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
-IS, SOURCE CURRENT (A)
15
10 0?C TA= 15 TA= 125?C?
5 TA= 85?C TA = 25?C TA= -55?C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current
DMP3028LSD
Document number: DS35966 Rev. 3 - 2
4 of 6
www.taochip.cn
June 2013
? Diodes Incorporated
DMP3028LSD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E 0.254
A1 L Gauge Plane Seating Plane
Detail ?A‘
h
7°~9°
45° A2 A A3 e D b Detail ?A‘
SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 Θ 0??8??All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1 C2
Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Y DMP3028LSD
Document number: DS35966 Rev. 3 - 2
5 of 6
www.taochip.cn
June 2013
? Diodes Incorporated
DMP3028LSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright ? 2013, Diodes Incorporated
www.diodes.com DMP3028LSD
Document number: DS35966 Rev. 3 - 2
6 of 6
www.taochip.cn
June 2013
? Diodes Incorporated